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CMOS LDO Regulator Series for Portable Equipments
Ultra Small Package CMOS LDO Regulators
BHRB1WGUT Series
No.09020EBT03
Description The BHRB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision ( 1%) output voltage. Proprietary ROHM technology enables a small load regulation of 2 mV and a dropout voltage of 100 mV. At just 1.0 mm 1.04 mm, the new VCSP60N1 package is extremely compact, and the IC's enhanced protection circuits contribute to improved end products characteristics.
Features 1) High accuracy output voltage: 1% 2) Dropout voltage: 100 mV (at 100 mA) 3) Stable with ceramic capacitors 4) Low bias current: 34 A 5) High ripple rejection ratio: 63 dB (Typ., 1 kHz) 6) Output voltage on/off control 7) Built-in overcurrent and thermal shutdown circuits 8) VCSP60N1 WL-CSP package : (1.0x1.04x0.6mm)
Applications Battery-driven portable devices, etc.
Product line 150 mA BHRB1WGUT Series Product name 1.5 1.8 BHRB1WGUT
2.5
2.8
2.9
3.0
3.1
3.3
Package VCSP60N1
Model name: BHRB1W a b Symbol 15 18 25 28 Description Output voltage specification Output voltage (V) 1.5 V (Typ.) 29 1.8 V (Typ.) 30 2.5 V (Typ.) 31 2.8 V (Typ.) 33 Package GUT: VCSP60N1
a
Output voltage (V) 2.9 V (Typ.) 3.0 V (Typ.) 3.1 V (Typ.) 3.3 V (Typ.)
b
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1/8
2009.09 - Rev.B
BHRB1WGUT Series
Absolute maximum ratings Parameter Applied supply voltage Power dissipation Operating temperature range Storage temperature range
Technical Note
Symbol VMAX Pd Topr Tstg
Limit -0.3 to +6.5 530*1 -40 to +85 -55 to +125
Unit V mW C C
*1: Reduce by 5.3 mW/C over 25C, when mounted on a glass epoxy PCB (7 mm 7 mm 0.8 mm).
Recommended operating ranges (not to exceed Pd) Parameter Symbol Power supply voltage Output current VIN IOUT
Limit 2.5 to 5.5 0 to 150
Unit V mA
Recommended operating conditions Parameter Symbol Input capacitor Output capacitor CIN CO
Min. 0.7*2 0.7*2
Typ. 1.0 1.0
Max. -- --
Unit F F
Conditions The use of ceramic capacitors is recommended. The use of ceramic capacitors is recommended.
*2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value cannot change as time progresses.
Electrical characteristics *5 (Unless otherwise specified, Ta = 25C, VIN = VOUT + 1.0 V , STBY = 1.5 V, CIN = 1 F, CO = 1 F) Parameter Symbol Min. Typ. Max. Unit Conditions VOUT 0.99 Output voltage 1 VOUT1 VOUT - 25 mV Output voltage 2 Circuit current Circuit current (STBY) Ripple rejection ratio Dropout voltage Line regulation Load regulation Overcurrent protection limit current Short current STBY pin current STBY control voltage ON OFF VOUT2 IGND ICCST RR VSAT VDLI VDLO ILMAX ISHORT ISTBY VSTBH VSTBL VOUT 0.97 -- -- -- -- -- -- -- -- 0.5 1.2 -0.2 VOUT 34 -- 63 100 2 2 300 40 1.3 -- -- VOUT VOUT + 25 mV VOUT 1.03 72 1.0 -- 150 20 30 -- -- 3.6 VIN 0.2 V A A dB mV mV mV mA mA A V V VOUT 1.01 V IOUT = 1 mA, Ta = 25C, BH25RB1WGUT or higher IOUT = 1mA, Ta = 25C, BH15, 18RB1WGUT IOUT = 1 mA *3 Ta = -40C to 85C IOUT = 0 mA *3 Ta = -40C to 85C STBY = 0 V VRR = -20 dBv, fRR = 1 kz, IOUT = 10 mA VIN = 0.98 VOUT, IOUT = 100 mA (Excluding BH15, 18RB1WGUT) IOUT = 10 mA *4 VIN = VOUT + 0.5 V to 5.5 V IOUT = 1 mA to 100 mA VO = VOUT 0.98 VO = 0 V Ta = -40C to 85C*3 Ta = -40C to 85C*3 Ta = -40C to 85C*3
* This IC is not designed to be radiation-resistant. *3: These specifications are guaranteed by design. *4: For BH15, 18RB1WGUT, VIN = 3.0 V to 5.5 V. *5: For BH15, 18RB1WGUT, VIN = 3.5 V.
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2/8
2009.09 - Rev.B
BHRB1WGUT Series
Typical characteristics
4.0 3.5 4.0 3.5
Technical Note
4.0 3.5 Output Volt age VOUT [V] 3.0 2.5 2.0 1.5 1.0 0.5 0.0
0 1 2 3 4 5
Output Voltage VOUT [V]
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5
Output Volt age VOUT [ V]
3.0 2.5 2.0 1.5 1.0 0.5 0.0
0
1
Input Voltage VIN[V]
Input Voltage VIN[V]
2 3 4 Input Voltage VIN[V]
5
Fig. 1 Output Voltage vs Input Voltage (BH15RB1WGUT)
60 60
Fig. 2 Output Voltage vs Input Voltage (BH28RB1WGUT)
60
Fig. 3 Output Voltage vs Input Voltage (BH33RB1WGUT)
50
50
50
GND Current IGND[A]
GND Current IGND[A]
40
40
GND Current IGND[A]
0 1 2 3 4 5
40
30
30
30
20
20
20
10
10
10
0
0
0
0
1
2 3 4 Input Volt age VIN[V]
5
Input Voltage VIN[V]
0
1
2
3
4
5
Input Voltage VIN[V]
Fig. 4 GND Current vs Input Voltage (BH15RB1WGUT)
3.5
Fig. 5 GND Current vs Input Voltage (BH28RB1WGUT)
3.5 3.0 3.0
Fig. 6 GND Current vs Input Voltage (BH33RB1WGUT)
3.5 Output Voltage VOUT[V] Out put Voltage VOUT[V]
0 100 200 300 400
3.0 Output Voltage V OUT[V] 2.5 2.0 1.5 1.0 0.5
2.5 2.0 1.5 1.0 0.5 0.0
2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400
0.0 0 100 200 300 Out put Current IOUT[mA] 400
Output Current IOUT[ mA]
Output Current IOUT[mA]
Fig. 7 Output Voltage vs Output Current (BH15RB1WGUT)
200 0.5
Fig. 8 Output Voltage vs Output Current (BH28RB1WGUT)
Fig. 9 Output Voltage vs Output Current (BH33RB1WGUT)
Dropout Voltage VSAT [ V]
150
Dropout Voltage VSAT [ V]
0.4
0.3
100
0.2
50
0.1
0 0 50 100 150
0.0 0 50 100 150
O utput Current IOUT[mA]
Output Current IOUT[ mA]
Fig. 10 Dropout Voltage vs Output Current (BH28RB1WGUT)
Fig. 11 Dropout Voltage vs Output Current (BH33RB1WGUT)
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3/8
2009.09 - Rev.B
BHRB1WGUT Series
1.60
2.90
Technical Note
3.40
Output Voltage V OUT[V]
1.55
Output Voltage V OUT[V]
2.85
[V] Output Voltage V
OUT
3.35
1.50
2.80
3.30
1.45
2.75
3.25
IOUT=1mA
1.40 -50 -25 0 25 50 75 100
2.70 -50 -25 0 25
IOUT=1mA
3.20
50 75 100
IOUT=1mA
-50 -25 0 25 50 75 100
Temp[]
T emp[ ]
Temp[]
Fig. 12 Output Voltage vs Temperature (BH15RB1WGUT)
80 80
Fig. 13 Output Voltage vs Temperature (BH28RB1WGUT)
80
Fig. 14 Output Voltage vs Temperature (BH33RB1WGUT)
70
70
70
Ripple Rejection R.R.[dB]
Ripple Rejection R.R.[dB]
60
60
Ripple Rejection R.R.[dB]
60
50
50
50
40
40
40
30
30
30
20
Co=1.0F Io=10mA
100 1k 10 k 100 k 1M
20
Co=1.0F Io=10mA
100 1k 10 k 100 k 1M
20
Co=1.0F Io=10mA
100 1k 10 k 100 k 1M
10
10
10
Frequency f[Hz]
Frequency f[Hz]
Frequency f[Hz]
Fig. 15 Ripple Rejection (BH15RB1WGUT)
Fig. 16 Ripple Rejection (BH28RB1WGUT)
Fig. 17 Ripple Rejection (BH33RB1WGUT)
IOUT = 1 mA 30 mA
IOUT = 1 mA 30 mA
IOUT = 1 mA 30 mA
VOUT
50 mV/div VOUT 50 mV/div
VOUT
50 mV/div
50 s/div
50 s/div
50 s/div
Fig. 18 Load Response (Co = 1.0 F) (BH15RB1WGUT)
Fig. 19 Load Response (Co = 1.0 F) (BH28RB1WGUT)
Fig, 20 Load Response (Co = 1.0 F) (BH33RB1WGUT)
1 V/div STBY STBY
1 V/div STBY
1 V/div
Co = 1 F Co = 1 F 1 V/div RL = 1.5 k VOUT Co = 2.2 F 100 s/div VOUT
1 V/div RL = 2.8 k Co = 1 F
1 V/div RL = 3.3 k
Co = 2.2 F 100 s/div
VOUT
Co = 2.2 F 100 s/div
Fig. 21 Output Voltage Rise Time (BH15RB1WGUT)
Fig. 22 Output Voltage Rise Time (BH28RB1WGUT)
Fig. 23 Output Voltage Rise Time (BH33RB1WGUT)
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4/8
2009.09 - Rev.B
BHRB1WGUT Series
Block Diagram, Recommended Circuit Diagram, and Pin Assignment Diagram BHRB1WGUT
VIN VIN
B2
VO LTAG E R EF ERE NCE
Technical Note
Cin
TH ERM A L P RO T ECT IO N
VOUT
B1 A1
VOUT
Pin No. B2 B1 A1 A2
Symbol VIN VOUT GND STBY
1PIN MARK
G ND
Co
O VER CU RRE NT P RO TE CTIO N
Function Power supply input Voltage output Ground Output voltage on/off control (High: ON, Low: OFF)
VSTBY
STBY
A2
C O NT RO L BLO CK
1 A
2
Cin: 1.0 F Co: 1.0 F
B
TOP VIEW (Mark side)
Fig. 24
Power Dissipation (Pd) 1. Power dissipation (Pd) Power dissipation calculations include output power dissipation characteristics and internal IC power consumption. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX) VIN: Input voltage PMAX = (VIN - VOUT) IOUT (MAX.) VOUT: Output voltage IOUT (MAX): Output current 2. Power dissipation/power dissipation reduction (Pd) VCSP60N1
0.6
530 mW Board: 7 mm 7 mm 0.8 mm Material: Glass epoxy PCB
0.4
Pd[W]
0.2 0 0 25 50 75 100 125
Ta[]
Fig. 25 VCSP60N1 Power Dissipation/Power Dissipation Reduction (Example)
*Circuit design should allow a sufficient margin for the temperature range for PMAX < Pd.
Input Output Capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors are used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. Use X5R or X7R ceramic capacitors, which offer good temperature and DC bias characteristics as well as stable high voltages. Typical ceramic capacitor characteristics
120 100 120
Capacitance rate of change (%)(%) Capacitance rate of change
Capacitance rate of change (%) Capacitance rate of change (%)]
100
50 V torelance
50 V torelance
95 100
Capacitance rate of change (%) [%]
80
90
80
X7R X5R Y5V
16 V torelance
60
85
60
40
10 V torelance
16 V torelance
80
10 V torelance
40
20
75
20
0
0 1
70
0 -25 0 25 Temp[] 50 75
DC bias Vdc (V)
2
3
4
0
1
DC bias Vdc (V)
2
3
4
Fig. 26 Capacitance vs Bias (Y5V)
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Fig.27 Capacitance vs Bias (X5R, X7R)
Fig. 28 Capacitance vs Temperature (X5R, X7R, Y5V)
5/8
2009.09 - Rev.B
BHRB1WGUT Series
Technical Note
Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers. BHRB1WGUT
100
10
COUT = 1.0 F Ta = +25C
ESR[]
1
Stable region
0.1
0.01 0 50 100 150
IOUT[mA] Output Current Iout [mA]
Fig. 29 Stable Operating Region Characteristics (Example) Operation Notes 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. Ground wiring patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. Influence of strong light Exposure of the IC to strong light sources such as infrared light from a halogen lamp may cause the IC to malfunction. When it is necessary to use the IC in such environments, implement measures to block exposure to light from the light source. During testing, exposure to neither fluorescent lighting nor white LEDs had a significant effect on the IC.
3.
4.
5.
6.
7.
8.
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6/8
2009.09 - Rev.B
BHRB1WGUT Series
9. GND voltage The potential of GND pin must be minimum potential in all operating conditions.
Technical Note
10. Back Current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
OUT
STBY
GND
Fig. 30 Example Bypass Diode Connection 11. Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 12. Regarding Input Pin of the IC (Fig.31) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Resistor Pin A Pin A
N N P
+
Transistor (NPN) Pin B
C B E B P P+ N C E
Pin B
N P P+ N
Parasitic element
P+
N
P substrate Parasitic element
GND
P substrate Parasitic element
GND GND GND
Parasitic element Other adjacent elements
Fig. 31 Example of IC structure
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7/8
2009.09 - Rev.B
BHRB1WGUT Series
Ordering part number
Technical Note
B
Part No.
H
3
0
R
B
1
W
Shutdown switch W : Includes switch
G
U
T
-
E
2
Output voltage
Series RB1 : High ripple rejection
Package GUT: VCSP60N1
Packaging and forming specification E2: Embossed tape and reel
VCSP60N1

1Pin MARK
1.040.1

Tape Quantity
1.000.1
0.210.05 0.60.075
Embossed carrier tape 3000pcs E2
(The direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand.)
Direction of feed
S
0.08 S
0.270.1
4-0.30.05
0.05 A B
B
A
1234
B
1234
1234
1234
1234
1234
0.5
A 1 2
Reel
1Pin
Direction of feed
0.250.1
0.5
(Unit:mm)
When you order , please order in times the amount of package quantity.
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8/8
2009.09 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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